Axcelis Technologies (ACLS) announced a Joint Development Program, or JDP, with GE Aerospace (GE) focused on the development of production-worthy 6.5 to 10kV superjunction power devices. Processes will be developed on Axcelis’ Purion XEmax high energy implanter, which provides the industry’s highest beam currents over the broadest energy range – up to 15MeV. This JDP supports the ‘Advanced High Voltage Silicon Carbide Switches’ project led by GE Aerospace as part of the Commercial Leap Ahead for Wide Bandgap Semiconductors Hub, which is headed by North Carolina State University. This project will aim to improve the performance of power switches used in important emerging applications. Silicon Carbide, or SiC, wide bandgap semiconductors deliver higher voltages, operating temperatures and frequencies compared to traditional Silicondevices.
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