Atomera collaborates with CINT on GaN transistors

Atomera announced a user project at the Center for Integrated Nanotechnologies, or CINT, at Sandia National Laboratories, a Department of Energy, Office of Science, Nanoscale Science Research Center, to address the challenges of growing Gallium Nitride, or GaN, films on Silicon, or Si. This project aims to create the world’s first GaN transistors and test data from wafers employing Atomera’s Mears Silicon Technology. The effort will build upon improvements already observed at the materials level in GaN/MST on Silicon wafers.