4DS Memory Advances ReRAM Technology with Successful 20nm Array and Strategic Partnerships

4DS Memory ( (AU:4DS) ) has issued an update.

4DS Memory Limited has successfully manufactured its first 20nm memory cell array, marking a significant milestone in its Interface Switching ReRAM technology development. This advancement, following extensive testing and optimization of the Fifth Platform Lot, positions the company to potentially revolutionize memory technology. The company also secured $6 million through a placement and $2.6 million from a Share Purchase Plan, strengthening its financial position. Additionally, 4DS is collaborating with Infineon Technologies LLC to design a custom ReRAM memory test chip, further advancing its technology development. These developments could significantly impact 4DS’s market positioning and future commercialization strategies.

More about 4DS Memory

4DS Memory Limited is a semiconductor technology company based in Silicon Valley, specializing in high bandwidth, high endurance, persistent non-volatile memory for advanced CMOS process nodes. Its key technology, Interface Switching ReRAM, is designed for compute-intensive and AI processor applications, featuring tuneable persistence and low energy per bit. Established in 2007, 4DS holds a portfolio of 34 USA patents and is pioneering the development of PCMO ReRAM on advanced CMOS.

Technical Sentiment Signal: Strong Buy

Current Market Cap: $41.19M

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