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An announcement from Guangdong Tianyu Semiconductor Co Ltd Class H ( (HK:2658) ) is now available.
Guangdong Tianyu Semiconductor has entered into a strategic cooperation agreement with Qinghe Jingyuan Semiconductor Technology (Group) to jointly develop and industrialize advanced bonding materials and processes, including bonded SiC, silicon-on-insulator (SOI), piezoelectric-on-insulator (POI), ultra-large 12-inch and above SiC composite heat dissipation baseplates, and interposers. Under the agreement, Tianyu will lead process development and mass production introduction of these bonded materials, while Qinghe Jingyuan will provide customized equipment and technical support across ion implantation, wafer-level bonding, precision polishing, crystal repair, and stripping, covering a range of materials such as diamond, Ga2O3, GaN, lithium niobate, and lithium tantalate; the collaboration is expected to enhance Tianyu’s manufacturing capabilities, accelerate technology iteration in wide bandgap and advanced substrate markets, and strengthen its competitive position, with each party retaining ownership of its independently developed intellectual property.
More about Guangdong Tianyu Semiconductor Co Ltd Class H
Guangdong Tianyu Semiconductor Co., Ltd. is a PRC-based semiconductor company focused on silicon carbide (SiC) materials and related advanced substrates used in power and high-performance electronics. The group develops and produces bonded SiC and other composite materials that target next-generation applications requiring high thermal conductivity and reliability, positioning it within the fast-growing wide bandgap semiconductor materials segment.
Average Trading Volume: 514,173
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